zvp4525g semiconductors issue 4 - june 2004 1 summary v (br)dss =-250v; r ds(on) =14v; i d =-265ma description this 250v enhancement mode p-channel mosfet provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. applications benefiting from this device include a variety of telecom and general high voltage circuits. sot89 and sot23-6 versions are also available. features ? high voltage ? low on-resistance ? fast switching speed ? low gate drive ? low threshold ? complementary n-channel type zvn4525g ? sot223 package applications ? earth recall and dialling switches ? electronic hook switches ? high voltage power mosfet drivers ? telecom call routers ? solid state relays ordering information device reel size tape width quantity per reel ZVP4525GTA 7? 8mm embossed 1000 units zvp4525gtc 13? 8mm embossed 4000 units device marking ? zvp4525g 250v p-channel enhancement mode mosfet d d s g top view s o t 2 2 3
zvp4525g semiconductors issue 4 - june 2004 2 thermal resistance parameter symbol v alue unit junction to ambient (a) r ja 63 c/w junction to ambient (b) r ja 26 c/w notes : (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. absolute maximum ratings. parameter symbol limit unit drain-source voltage v dss 250 v gate source voltage v gs 40 v continuous drain current (v gs =10v; ta=25c) (a) (v gs =10v; ta=70c) (a) i d i d -265 -212 ma ma pulsed drain current (c) i dm -1 a continuous source current (body diode) i s -0.75 a pulsed source current (body diode) i sm -1 a power dissipation at t a =25c (a) linear derating factor p d 2 16 w mw/c operating and storage temperature range t j : t stg -55 to +150 c nb high voltage applications for high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.
zvp4525g semiconductors issue 4 - june 2004 3 characteristics
zvp4525g semiconductors issue 4 - june 2004 4 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -250 -285 v i d =-1ma, v gs =0v zero gate voltage drain current i dss -30 -500 na v ds =-250v, v gs =0v gate-body leakage i gss 1 100 na v gs = 40v, v ds =0v gate-source threshold voltage v gs(th) -0.8 -1.5 -2.0 v i d =-1ma, v ds =v gs static drain-source on-state resistance (1) r ds(on) 10 13 14 18 ? ? v gs =-10v, i d =-200ma v gs =-3.5v, i d =-100ma forward transconductance (3) g fs 80 200 ms v ds =-10v,i d =-0.15a dynamic (3) input capacitance c iss 73 pf v ds =-25 v, v gs =0v, f=1mhz output capacitance c oss 12.8 pf reverse transfer capacitance c rss 3.91 pf switching (2) (3) turn-on delay time t d(on) 1.53 ns v dd =-30v, i d =-200ma r g =50 ? ,v gs =-10v (refer to test circuit) rise time t r 3.78 ns turn-off delay time t d(off) 17.5 ns fall time t f 7.85 ns total gate charge q g 2.45 3.45 nc v ds =-25v,v gs =-10v, i d =-200ma(refer to test circuit) gate-source charge q gs 0.22 0.31 nc gate drain charge q gd 0.45 0.63 nc source-drain diode diode forward voltage (1) v sd 0.97 v t j =25c, i s =-200ma, v gs =0v reverse recovery time (3) t rr 205 290 ns t j =25c, i f =-200ma, di/dt= 100a/ s reverse recovery charge (3) q rr 21 29 nc notes: (1) measured under pulsed conditions. width=300 s. duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zvp4525g semiconductors issue 4 - june 2004 5 typical characteristics
zvp4525g semiconductors issue 4 - june 2004 6 characteristics
zvp4525g semiconductors issue 4 - june 2004 7 basicgatechargewaveform gate charge test circuit switching time waveforms switching time test circuit charge q gs q gd q g 10v v g v v ds gs 12v 0.2f 50k 0.3f i d i g current regulator same as d.u.t d.u.t v ds v gs 90% 10% t r t f t d(off) t d(on) r g v gs r d v ds v cc -10v pulse width < 1s duty factor 0.1% test circuits
zvp4525g semiconductors 8 issue 4 - june 2004 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex plc lansdowne road, chadderton oldham, ol9 9ty united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2004 package outline pad layout details dim millimeters inches dim millimeters inches min max min max min max min max a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - ---- package dimensions controlling dimensions are in millimeters. approximate conversions are given in inches
|
